mbl104s, mbl106s, MBL108S, mbl110s www.vishay.com vishay general semiconductor revision: 12-apr-13 1 document number: 89959 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 miniature glass passivated single-phase surface mount bridge rectifier features ? ul recognition file number e54214 ? low profile - typical height of 1.4 mm ? ideal for automated placement ? high surge current capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for power supply, lighting ballas ter, battery charger, home appliances, office equipment, and telecommunication applications. mechanical data case: mbls epoxy meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 ? m3 suffix, meets jesd 2 01 class 1a whisker test polarity: as marked on body note (1) device mounted on 0.47" x 0.47" (12 mm x 12 mm) copper pad areas, 1 oz. pcb primary characteristics i f(av) 1.0 a v rrm 400 v, 600 v, 800 v, 1000 v i fsm 30 a i r 5 a v f at i f = 0.4 a 0.95 v t j max. 150 c case style (mbls) ~ ~ - + ~ ~ + - ~ + - maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbl104s mbl106s MBL108S mbl110s unit maximum repetitive peak reverse voltage v rrm 400 600 800 1000 v maximum rms voltage v rms 280 420 560 700 v maximum dc blocking voltage v dc 400 600 800 1000 v maximum average forward output rectified current ? (fig. 1, fig. 2) i f(av) (1) 1.0 a peak forward surge current single sine-wave superimposed on rated load i fsm 30 a rating for fusing (t < 8.3 ms) i 2 t3.0a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
mbl104s, mbl106s, MBL108S, mbl110s www.vishay.com vishay general semiconductor revision: 12-apr-13 2 document number: 89959 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) device mounted on 0.47 " x 0.47 " (12 mm x 12 mm) copper pad areas, 1 oz. pcb ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve for output rectified current fig. 2 - maximum non-repetitive peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol mbl104s mbl106s MBL108S mbl110s unit maximum instantaneous forward voltage drop per diode i f = 0.4 a t a = 25 c v f (1) 0.95 v maximum dc reverse current per diode rated v r t a = 25 c i r (2) 5 a t a = 125 c 500 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mbl104s mbl106s MBL108S mbl110s unit typical thermal resistance (1) r ? ja 72 c/w r ? jl 25 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode mbl106s-m3/i 0.136 i 4000 13" diam eter plastic tape and reel 1 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 0.1 0.2 0.3 0.4 0 25 50 75 100 125 150 ambient temperature (c) average rectified forward current (a) free air, mounted on 12 mm x 12 mm, 1 oz. pcb lead temperature (c) average rectified forward current (a) 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0 25 50 75 100 125 150 free air, mounted on 12 mm x 12 mm, 1 oz. pcb r thjl = 25 c/w
mbl104s, mbl106s, MBL108S, mbl110s www.vishay.com vishay general semiconductor revision: 12-apr-13 3 document number: 89959 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - forward power dissipation fig. 4 - typical instantaneous forward characteristics per diode fig. 5 - typical reverse characteristics per diode fig. 6 - typical juncti on capacitance per diode package outline dimensions in millimeters ? 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 average rectified forward current (a) forward power di ss ipation (w) 0.1 1 10 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t a = 80 c t a = 150 c t a = 25 c t a = 100 c 0.01 0.1 1 10 100 20 40 60 80 100 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t a = 80 c t a = 150c t a = 100c t a = 25 c 1 10 100 0.1 1 10 100 junction capacitance (pf) rever s e voltage (v) 5.1 0.1 6.2 0.2 4.6 0.1 0.45 0.2 0.7 0.1 4 0.2 5.3 max. 4.8 max. 1.5 max. 0.1 0 - 0.08 0.2 + 0.1 - 0.05 0.6 1 2 4 3 1 2 4 3 mbl s
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